BSS50A Datasheet, Equivalent, Cross Reference Search
Type Designator: BSS50A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 800
Noise Figure, dB: -
Package: TO39
BSS50A Transistor Equivalent Substitute - Cross-Reference Search
BSS50A Datasheet (PDF)
bss50a bss51a bss52a.pdf
NPN BSS50A-51A-52A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS They are NPN transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . PNP complements are the BSS60A 61A 62A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Val
bss50 bss51 bss52 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSS50; BSS51; BSS52NPN Darlington transistors1997 Sep 03Product specificationSupersedes data of 1997 May 13File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN Darlington transistors BSS50; BSS51; BSS52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 emi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
