2SA1201-O PDF and Equivalents Search

 

2SA1201-O Specs and Replacement

Type Designator: 2SA1201-O

SMD Transistor Code: DO

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 500 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT89

 2SA1201-O Substitution

- BJT ⓘ Cross-Reference Search

 

2SA1201-O datasheet

 ..1. Size:386K  mcc

2sa1201-o.pdf pdf_icon

2SA1201-O

MCC 2SA1201-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1201-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability... See More ⇒

 6.1. Size:386K  mcc

2sa1201-y.pdf pdf_icon

2SA1201-O

MCC 2SA1201-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1201-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability... See More ⇒

 7.1. Size:151K  toshiba

2sa1201.pdf pdf_icon

2SA1201-O

2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Unit mm Power Amplifier Applications High voltage VCEO = -120 V High transition frequency f = 120 MHz (typ.) T Small flat package P C = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2881 Maximum Ratings (Ta = 25 C) Characteri... See More ⇒

 7.2. Size:81K  utc

2sa1201.pdf pdf_icon

2SA1201-O

UNISONIC TECHNOLOGIES CO., LTD 2SA1201 Preliminary PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES *High voltage VCEO= -120V *High transition frequency fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) ORDERING INFORMATION Ordering Numb... See More ⇒

Detailed specifications: 2SA1039A , 2SA1048-GR , 2SA1048-Y , 2SA1069A-Z , 2SA1162-GR , 2SA1162-HF , 2SA1162-O , 2SA1162-Y , 431 , 2SA1201-Y , 2SA1213GP , 2SA1213-O , 2SA1213O-G , 2SA1213-Y , 2SA1213Y-G , 2SA1298-O , 2SA1298-Y .

Keywords - 2SA1201-O pdf specs

 2SA1201-O cross reference

 2SA1201-O equivalent finder

 2SA1201-O pdf lookup

 2SA1201-O substitution

 2SA1201-O replacement

 

 

 


 
↑ Back to Top
.