All Transistors. 2SA1213O-G Datasheet

 

2SA1213O-G Datasheet and Replacement


   Type Designator: 2SA1213O-G
   SMD Transistor Code: NO
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT89

 2SA1213O-G Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1213O-G Datasheet (PDF)

 ..1. Size:143K  comchip
2sa1213o-g.pdf pdf_icon

2SA1213O-G

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 Base -Small flat package. 2 Collector SOT-89-3L 3 Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25 C unless other... See More ⇒

 6.1. Size:195K  toshiba
2sa1213o 2sa1213y.pdf pdf_icon

2SA1213O-G

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolut... See More ⇒

 7.1. Size:223K  toshiba
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2SA1213O-G

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max... See More ⇒

 7.2. Size:999K  mcc
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2SA1213O-G

2SA1213-O/2SA1213-Y Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO -50 IC=-100 A, IE=0 Collector-Base Breakdown Voltage V V(BR)CEO -50 IC=-10mA, IB=0 Collector-Emitter Breakdown Voltag V V(BR)EBO -5 IE=-100 A, IC=0 Emitter-Base Breakdown Voltage V ICBO VCB=-50V, IE=0 Collector-Base Cutoff Current -0.1 A IEB... See More ⇒

Datasheet: 2SA1162-GR , 2SA1162-HF , 2SA1162-O , 2SA1162-Y , 2SA1201-O , 2SA1201-Y , 2SA1213GP , 2SA1213-O , D882P , 2SA1213-Y , 2SA1213Y-G , 2SA1298-O , 2SA1298-Y , 2SA1386B , 2SA1386B-A , 2SA1400-Z , 2SA1412-Z .

History: 2SD1776 | MPS2712 | 2SD1851 | CHT2907VGP | 2SC184 | 2SC1804 | 2SD1816

Keywords - 2SA1213O-G transistor datasheet

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