2SA1386B Datasheet. Specs and Replacement
Type Designator: 2SA1386B 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO3P
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2SA1386B datasheet
RoHS 2SA1386B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complem... See More ⇒
RoHS 2SA1386B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complem... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A DESCRIPTION With TO-3PN package Complement to type 2SC3519/3519A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITI... See More ⇒
Detailed specifications: 2SA1201-Y, 2SA1213GP, 2SA1213-O, 2SA1213O-G, 2SA1213-Y, 2SA1213Y-G, 2SA1298-O, 2SA1298-Y, D667, 2SA1386B-A, 2SA1400-Z, 2SA1412-Z, 2SA1416S-TD-E, 2SA1416T-TD-E, 2SA1417S-TD-E, 2SA1417T-TD-E, 2SA1418S-TD-E
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