All Transistors. 2SA1416T-TD-E Datasheet

 

2SA1416T-TD-E Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1416T-TD-E
   SMD Transistor Code: AB
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89

 2SA1416T-TD-E Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1416T-TD-E Datasheet (PDF)

 6.1. Size:224K  onsemi
2sa1416s 2sa1416t 2sc3646s 2sc3646t.pdf

2SA1416T-TD-E
2SA1416T-TD-E

Ordering number : EN2005C2SA1416/2SC3646Bipolar Transistorhttp://onsemi.com() ) ( ), (100V, ( 1A, Low VCE sat PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1416Absol

 7.1. Size:102K  sanyo
2sa1416 2sc3646.pdf

2SA1416T-TD-E
2SA1416T-TD-E

Ordering number : EN2005B2SA1416 / 2SC3646SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1416 / 2SC3646High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC

 7.2. Size:124K  sanyo
2sa1416.pdf

2SA1416T-TD-E
2SA1416T-TD-E

 7.3. Size:155K  onsemi
2sa1416 2sc3646.pdf

2SA1416T-TD-E
2SA1416T-TD-E

DATA SHEETwww.onsemi.comBipolar TransistorELECTRICAL CONNECTION22()100 V, ()1 A, Low VCE(sat), (PNP)NPN Single PCP1: Base1 12: Collector3: Emitter2SA1416, 2SC36463 32SA1416 2SC3646Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed12 Ultrasmall Size Making it Easy to Provi

 7.4. Size:1559K  kexin
2sa1416.pdf

2SA1416T-TD-E
2SA1416T-TD-E

SMD Type TransistorsPNP Transistors 2SA14161.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity0.42 0.10.46 0.1Fast Switching Time Complementary to 2SC36461.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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