All Transistors. 2SA1419S-TD-H Datasheet

 

2SA1419S-TD-H Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1419S-TD-H
   SMD Transistor Code: AE
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SOT89

 2SA1419S-TD-H Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1419S-TD-H Datasheet (PDF)

 ..1. Size:220K  onsemi
2sa1419s 2sa1419s-td-h 2sa1419t 2sa1419t-td-h 2sc3649s 2sc3649s-td-h 2sc3649t 2sc3649t-td-h.pdf

2SA1419S-TD-H 2SA1419S-TD-H

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

 7.1. Size:127K  sanyo
2sa1419.pdf

2SA1419S-TD-H 2SA1419S-TD-H

 7.2. Size:305K  sanyo
2sa1419 2sc3649.pdf

2SA1419S-TD-H 2SA1419S-TD-H

Ordering number : EN2007B2SA1419 / 2SC3649SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1419 / 2SC3649High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs.Specifications ( ) :

 7.3. Size:356K  onsemi
2sa1419 2sc3649.pdf

2SA1419S-TD-H 2SA1419S-TD-H

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

 7.4. Size:1548K  kexin
2sa1419.pdf

2SA1419S-TD-H 2SA1419S-TD-H

SMD Type TransistorsPNP Transistors 2SA14191.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity Complementary to 2SC36490.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter -

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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