All Transistors. 2SA1647-Z Datasheet

 

2SA1647-Z Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1647-Z
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 18 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 110 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO252

 2SA1647-Z Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1647-Z Datasheet (PDF)

 ..1. Size:157K  nec
2sa1647-z.pdf

2SA1647-Z
2SA1647-Z

DATA SHEETSILICON POWER TRANSISTOR2SA1647, 2SA1647-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid

 ..2. Size:204K  inchange semiconductor
2sa1647-z.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1647-ZDESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in Switching regulators,

 7.1. Size:160K  nec
2sa1647.pdf

2SA1647-Z
2SA1647-Z

DATA SHEETSILICON POWER TRANSISTOR2SA1647, 2SA1647-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid

 7.2. Size:200K  inchange semiconductor
2sa1647.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1647DESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in Switching regulators,D

 8.1. Size:96K  sanyo
2sa1641.pdf

2SA1647-Z
2SA1647-Z

Ordering number:EN2926APNP Epitaxial Planar Silicon Transistor2SA1641High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Low saturation voltage.2045B Fast switching speed.[2SA1641] Large current capacity. Small and slim package making it easy to make2SA1641-used set smaller.1 : Base2 : Collector3

 8.2. Size:210K  renesas
2sa1646-z.pdf

2SA1647-Z
2SA1647-Z

Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200Rev.2.00Silicon Power Transistor Jul 01, 2010Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-v

 8.3. Size:268K  renesas
2sa1649-z.pdf

2SA1647-Z
2SA1647-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:156K  nec
2sa1648 2sa1648-z.pdf

2SA1647-Z
2SA1647-Z

DATA SHEETSILICON POWER TRANSISTOR2SA1648,1648-ZPNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWINGS (Unit: mm) speed switching and features a very low collector-to-emitter saturation voltage. 2.3 0.26.5 0.2This transistor is ideal for use in switching regulators, DC/DC 5.0 0.20.5 0.

 8.5. Size:139K  nec
2sa1646 2sa1646-z.pdf

2SA1647-Z
2SA1647-Z

DATA SHEETSILICON POWER TRANSISTOR2SA1646, 2SA1646-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage. This transistor is ideal for use in switchingpower supplies, DC/DC converters, motor drivers, solenoid drive

 8.6. Size:140K  nec
2sa1645-z.pdf

2SA1647-Z
2SA1647-Z

DATA SHEETSILICON POWER TRANSISTOR2SA1645, 2SA1645-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage. This transistor is ideal for use in switchingpower supplies, DC/DC converters, motor drivers, solenoid drive

 8.7. Size:143K  nec
2sa1649 2sa1649-z.pdf

2SA1647-Z
2SA1647-Z

DATA SHEETSILICON POWER TRANSISTOR2SA1649, 2SA1649-ZPNP SILICON EPITAXIAL POWER TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid dr

 8.8. Size:145K  nec
2sa1648-z.pdf

2SA1647-Z
2SA1647-Z

DATA SHEETSILICON POWER TRANSISTOR2SA1648, 2SA1648-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid drivers,

 8.9. Size:143K  nec
2sa1645 2sa1645-z.pdf

2SA1647-Z
2SA1647-Z

DATA SHEETSILICON POWER TRANSISTOR2SA1645, 2SA1645-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage. This transistor is ideal for use in switchingpower supplies, DC/DC converters, motor drivers, solenoid drive

 8.10. Size:144K  jmnic
2sa1640.pdf

2SA1647-Z
2SA1647-Z

JMnic Product Specification Silicon PNP Power Transistors 2SA1640 DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For switching regulator ,driver and power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=2

 8.11. Size:158K  jmnic
2sa1644.pdf

2SA1647-Z
2SA1647-Z

JMnic Product Specification Silicon PNP Power Transistors 2SA1644 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Emit

 8.12. Size:162K  jmnic
2sa1645.pdf

2SA1647-Z
2SA1647-Z

JMnic Product Specification Silicon PNP Power Transistors 2SA1645 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Emit

 8.13. Size:161K  jmnic
2sa1646.pdf

2SA1647-Z
2SA1647-Z

JMnic Product Specification Silicon PNP Power Transistors 2SA1646 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Emit

 8.14. Size:143K  jmnic
2sa1643.pdf

2SA1647-Z
2SA1647-Z

JMnic Product Specification Silicon PNP Power Transistors 2SA1643 DESCRIPTION With TO-220F package Complement to type 2SC4327 Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDI

 8.15. Size:209K  inchange semiconductor
2sa1640.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1640DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max)@ (I = -3A, I = -0.1A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, driver and powerswitching applications.ABSOLU

 8.16. Size:216K  inchange semiconductor
2sa1644.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1644DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO

 8.17. Size:206K  inchange semiconductor
2sa1648.pdf

2SA1647-Z
2SA1647-Z

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1648DESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

 8.18. Size:199K  inchange semiconductor
2sa1646-z.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1646-ZDESCRIPTIONFast Switching SpeedLow Saturation Voltage-: V = -0.3V(Max)@I = -6ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features a very low V , is ideal for useCE(sat)

 8.19. Size:198K  inchange semiconductor
2sa1645-z.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1645-ZDESCRIPTIONLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for use in switching power supplies, DC/DCconverters, motor drivers, solenoid drivers, and other

 8.20. Size:217K  inchange semiconductor
2sa1645.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1645DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

 8.21. Size:200K  inchange semiconductor
2sa1649.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1649DESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transis

 8.22. Size:205K  inchange semiconductor
2sa1648-z.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1648-ZDESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis trans

 8.23. Size:217K  inchange semiconductor
2sa1646.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1646DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Fast Switching SpeedLow Saturation Voltage-: V = -0.3V(Max)@I = -6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features

 8.24. Size:205K  inchange semiconductor
2sa1649-z.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1649-ZDESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis trans

 8.25. Size:209K  inchange semiconductor
2sa1643.pdf

2SA1647-Z
2SA1647-Z

isc Silicon PNP Power Transistor 2SA1643DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -35V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -5A, I = -0.3A)CE(sat) C BComplement to Type 2SC4327Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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