2SA1647-Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETSILICON POWER TRANSISTOR2SA1647, 2SA1647-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid

isc Silicon PNP Power Transistor 2SA1647-ZDESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in Switching regulators,

DATA SHEETSILICON POWER TRANSISTOR2SA1647, 2SA1647-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid

isc Silicon PNP Power Transistor 2SA1647DESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in Switching regulators,D

Ordering number:EN2926APNP Epitaxial Planar Silicon Transistor2SA1641High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Low saturation voltage.2045B Fast switching speed.[2SA1641] Large current capacity. Small and slim package making it easy to make2SA1641-used set smaller.1 : Base2 : Collector3

Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200Rev.2.00Silicon Power Transistor Jul 01, 2010Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-v

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETSILICON POWER TRANSISTOR2SA1648,1648-ZPNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWINGS (Unit: mm) speed switching and features a very low collector-to-emitter saturation voltage. 2.3 0.26.5 0.2This transistor is ideal for use in switching regulators, DC/DC 5.0 0.20.5 0.

DATA SHEETSILICON POWER TRANSISTOR2SA1646, 2SA1646-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage. This transistor is ideal for use in switchingpower supplies, DC/DC converters, motor drivers, solenoid drive

DATA SHEETSILICON POWER TRANSISTOR2SA1645, 2SA1645-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage. This transistor is ideal for use in switchingpower supplies, DC/DC converters, motor drivers, solenoid drive

DATA SHEETSILICON POWER TRANSISTOR2SA1649, 2SA1649-ZPNP SILICON EPITAXIAL POWER TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid dr

DATA SHEETSILICON POWER TRANSISTOR2SA1648, 2SA1648-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid drivers,

DATA SHEETSILICON POWER TRANSISTOR2SA1645, 2SA1645-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage. This transistor is ideal for use in switchingpower supplies, DC/DC converters, motor drivers, solenoid drive

JMnic Product Specification Silicon PNP Power Transistors 2SA1640 DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For switching regulator ,driver and power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=2

JMnic Product Specification Silicon PNP Power Transistors 2SA1644 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1645 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1646 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1643 DESCRIPTION With TO-220F package Complement to type 2SC4327 Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDI

isc Silicon PNP Power Transistor 2SA1640DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max)@ (I = -3A, I = -0.1A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, driver and powerswitching applications.ABSOLU

isc Silicon PNP Power Transistor 2SA1644DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1648DESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon PNP Power Transistor 2SA1646-ZDESCRIPTIONFast Switching SpeedLow Saturation Voltage-: V = -0.3V(Max)@I = -6ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features a very low V , is ideal for useCE(sat)

isc Silicon PNP Power Transistor 2SA1645-ZDESCRIPTIONLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for use in switching power supplies, DC/DCconverters, motor drivers, solenoid drivers, and other

isc Silicon PNP Power Transistor 2SA1645DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon PNP Power Transistor 2SA1649DESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transis

isc Silicon PNP Power Transistor 2SA1648-ZDESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis trans

isc Silicon PNP Power Transistor 2SA1646DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Fast Switching SpeedLow Saturation Voltage-: V = -0.3V(Max)@I = -6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features

isc Silicon PNP Power Transistor 2SA1649-ZDESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis trans

isc Silicon PNP Power Transistor 2SA1643DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -35V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -5A, I = -0.3A)CE(sat) C BComplement to Type 2SC4327Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE