All Transistors. 2SB1260-R Datasheet

 

2SB1260-R Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1260-R
   SMD Transistor Code: BER_ZLR
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT89

 2SB1260-R Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1260-R Datasheet (PDF)

 ..1. Size:50K  kexin
2sb1260-r.pdf

2SB1260-R

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

 6.1. Size:50K  kexin
2sb1260-q.pdf

2SB1260-R

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

 6.2. Size:50K  kexin
2sb1260-p.pdf

2SB1260-R

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

 7.1. Size:140K  rohm
2sb1260 2sb1181 2sb1241.pdf

2SB1260-R
2SB1260-R

Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO=80V, IC = 1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.23) Low VCE(sat). 0.50.14.5+0.21.5Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.60.10.650.1 0.75(1) (2) (3)0.90

 7.2. Size:148K  rohm
2sb1260.pdf

2SB1260-R
2SB1260-R

Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO= -80V, IC = -1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.20.50.13) Low VCE(sat). 4.5+0.21.54) Complements the 2SD1898 / 2SD1733. 1.60.10.650.10.75(1) (2) (3)0.90.4+0.10.550.10.40.1 0.5

 7.3. Size:955K  rohm
2sb1260 2sb1181.pdf

2SB1260-R
2SB1260-R

2SB1260 / 2SB1181Datasheet PNP -1.0A -80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO-80VBase Collector IC-1.0AEmitter Base Emitter 2SB1260 2SB1181 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD17333) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -500mA/

 7.4. Size:297K  utc
2sb1260.pdf

2SB1260-R
2SB1260-R

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 32SB1260G-x-A

 7.5. Size:187K  secos
2sb1260.pdf

2SB1260-R
2SB1260-R

2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High breakdown voltage and high current BVCEO=-80V, IC=-1A 1 Good hFE linearity 23B C A Complements to 2SD1898 E ECPACKAGE INFORMATION B DWeight: 0.05 g (approximately) F G

 7.6. Size:137K  jiangsu
2sb1260.pdf

2SB1260-R

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Coll

 7.7. Size:215K  htsemi
2sb1260.pdf

2SB1260-R

2SB1 260TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V

 7.8. Size:114K  wietron
2sb1260.pdf

2SB1260-R
2SB1260-R

2SB1260PNP Plastic-Encapsulate TransistorSOT-89121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS(Ta=25%C)Rating UnitSymbolValue-80VdcCollector-Emitter VoltageVCEOVdcCollector-Base Voltage -80VCBOEmitter-Base Voltage VEBO -5.0 VdcIAdc(DC)C1.0Collector CurrentI2.0 Adc (Pulse)CPPCCollector Power Dissipation 0.5 WTj , Tstg %CJun

 7.9. Size:356K  willas
2sb1260.pdf

2SB1260-R
2SB1260-R

FM120-M WILLAS2SB1260 THRUSOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR (PNP) better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted applicati

 7.10. Size:984K  kexin
2sb1260.pdf

2SB1260-R
2SB1260-R

SMD Type TransistorsPNP Transistors2SB12601.70 0.1 Features Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty.0.42 0.10.46 0.1 Complementary to 2SD18981.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Colle

 7.11. Size:174K  cn hottech
2sb1260.pdf

2SB1260-R
2SB1260-R

Plastic-Encapsulate TransistorsFEATURES2SB1260(PNP) High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898.Marking: ZLMaximum Ratings (Ta=25 unless otherwise noted)1. BASEParameter Symbol Value Unit2. COLLECTO SOT-89Collector-Base Voltage VCBO -80 V3. EMITTERCollector-Emitter Voltage VCEO -80 V

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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