2SC3012-3PN Specs and Replacement
Type Designator: 2SC3012-3PN
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 130 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3PN
2SC3012-3PN Substitution
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2SC3012-3PN datasheet
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3012 DESCRIPTION With TO-3PN package Complement to type 2SA1232 High transition frequency APPLICATIONS Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat... See More ⇒
isc Silicon NPN Power Transistor 2SC3012 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1232 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF C Band Low Noise Amplifier Applications Unit mm High gain S21e 2 = 12dB (typ.) Low noise figure NF = 2.3dB (typ.), f = 1 GHz High fT f = 6.5 GHz T Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 7... See More ⇒
Detailed specifications: 2SC2881-O , 2SC2881-Y , 2SC2883-O , 2SC2883-Y , 2SC2923-126 , 2SC2923-220F , 2SC2983-O , 2SC2983-Y , BD139 , 2SC3052-E , 2SC3052-F , 2SC3052-G , 2SC3149S , 2SC3150A , 2SC3265-O , 2SC3265-Y , 2SC3279-L .
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