2SC3646S-TD-E pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SC3646S-TD-E Specs and Replacement

Type Designator: 2SC3646S-TD-E

SMD Transistor Code: CB

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 8.5 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: SOT89

2SC3646S-TD-E Substitution

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2SC3646S-TD-E datasheet

6.1. Size:224K onsemi

2sa1416s 2sa1416t 2sc3646s 2sc3646t.pdf pdf_icon

Ordering number EN2005C 2SA1416/2SC3646 Bipolar Transistor http //onsemi.com ( ) ) ( ), ( 100V, ( 1A, Low VCE sat PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1416 Absol... See More ⇒

7.1. Size:102K sanyo

2sa1416 2sc3646.pdf pdf_icon

Ordering number EN2005B 2SA1416 / 2SC3646 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1416 / 2SC3646 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC... See More ⇒

7.2. Size:139K sanyo

2sc3646.pdf pdf_icon

Ordering number EN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Fast switching time. [2SA1416/2SC3646] Very small size making it easy to provide high- density, small-sized hybrid ICs. E... See More ⇒

7.3. Size:155K onsemi

2sa1416 2sc3646.pdf pdf_icon

DATA SHEET www.onsemi.com Bipolar Transistor ELECTRICAL CONNECTION 2 2 ( )100 V, ( )1 A, Low VCE(sat), (PNP)NPN Single PCP 1 Base 1 1 2 Collector 3 Emitter 2SA1416, 2SC3646 3 3 2SA1416 2SC3646 Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed 1 2 Ultrasmall Size Making it Easy to Provi... See More ⇒