2SC4853A-4-TL-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4853A-4-TL-E
SMD Transistor Code: CN
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.09 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT323
2SC4853A-4-TL-E Transistor Equivalent Substitute - Cross-Reference Search
2SC4853A-4-TL-E Datasheet (PDF)
2sc4853a-4.pdf
Ordering number : ENA1076A2SC4853ARF Transistorhttp://onsemi.com6V, 15mA, fT=5GHz, NPN Single MCPFeatures Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz) 2 : NF=2.6dB typ (f=1GHz)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 12 VCollector-to-
2sc4853a.pdf
Ordering number : ENA1076 2SC4853ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorLow-Voltage, Low-Current2SC4853AHigh-Frequency Amplifier ApplicationsFeatures Low-voltage, low-current operation : fT=5GHz typ.(VCE=1V, IC=1mA) :S21e2=7dB typ (f=1GHz).: NF=2.6dB typ (f=1GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol
2sc4853.pdf
Ordering number:EN4578ANPN Epitaxial Planar Silicon Transistor2SC4853Low-Voltage, Low-CurrentHigh-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2059B: NF=2.6dB typ (f=1GHz).[2SC4853]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
