2SC4853A-4-TL-E Specs and Replacement
Type Designator: 2SC4853A-4-TL-E
SMD Transistor Code: CN
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.09 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SOT323
2SC4853A-4-TL-E Substitution
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2SC4853A-4-TL-E datasheet
Ordering number ENA1076A 2SC4853A RF Transistor http //onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features Low-voltage, low-current operation fT=5GHz typ (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz) 2 NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 12 V Collector-to-... See More ⇒
Ordering number ENA1076 2SC4853A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current 2SC4853A High-Frequency Amplifier Applications Features Low-voltage, low-current operation fT=5GHz typ. (VCE=1V, IC=1mA) S21e 2=7dB typ (f=1GHz). NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol ... See More ⇒
Ordering number EN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz). 2059B NF=2.6dB typ (f=1GHz). [2SC4853] 0.3 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base ... See More ⇒
Detailed specifications: 2SC4617XT1G, 2SC4618FRA, 2SC4622, 2SC4672-P, 2SC4672-Q, 2SC4672-R, 2SC4774GP, 2SC4793AF, BD139, 2SC4938, 2SC5027A, 2SC5027AF, 2SC5161, 2SC5198B, 2SC5200BL, 2SC5200N, 2SC5226A-4-TL-E
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History: 2SC1275 | 3DD101A
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