2SC5226A-4-TL-E pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SC5226A-4-TL-E Specs and Replacement

Type Designator: 2SC5226A-4-TL-E

SMD Transistor Code: LN

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5000 MHz

Collector Capacitance (Cc): 0.75 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT323

2SC5226A-4-TL-E Substitution

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2SC5226A-4-TL-E datasheet

4.1. Size:237K onsemi

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Ordering number ENA1062A 2SC5226A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-... See More ⇒

6.1. Size:75K sanyo

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Ordering number ENA1062 2SC5226A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5226A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditio... See More ⇒

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