2SC5231A-8-TL-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5231A-8-TL-E
SMD Transistor Code: C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT416
2SC5231A-8-TL-E Transistor Equivalent Substitute - Cross-Reference Search
2SC5231A-8-TL-E Datasheet (PDF)
2sc5231a-8.pdf
Ordering number : ENA1077A2SC5231ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single SMCPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall-sized package permitting applied sets to be made small and slimSpecificationsAbsolute Maximum Ratings at Ta=25CParamete
2sc5231a.pdf
Ordering number : ENA1077 2SC5231ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5231AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim.
2sc5231.pdf
Ordering number:EN5036BNPN Epitaxial Planar Silicon Transistor2SC5231VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2106A High cutoff frequency : fT=7GHz typ.[2SC5231] Very small-sized package permiting 2SC5231-0.750.30.6applied set
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CENU55 | DTA124TEFRA
History: CENU55 | DTA124TEFRA
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