2SC5277A-2-TL-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5277A-2-TL-E
SMD Transistor Code: D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.45 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT416
2SC5277A-2-TL-E Transistor Equivalent Substitute - Cross-Reference Search
2SC5277A-2-TL-E Datasheet (PDF)
2sc5277a-2.pdf
Ordering number : ENA1075A2SC5277ARF Transistorhttp://onsemi.com10V, 30mA, fT=8GHz, NPN Single SMCPFeatures Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) High gain 2 : S21e =10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz)
2sc5277a.pdf
Ordering number : ENA1075 2SC5277ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier2SC5277AOSC ApplicationsFeatures Low-noise : NF=0.9dB typ (f=1GHz).: NF=1.4dB typ (f=1.5GHz). High gain : S21e2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1
2sc5277.pdf
Ordering number:EN5187NPN Epitaxial Planar Silicon Transistor2SC5277UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2106A2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5277] High cutoff frequency : fT=11GHz typ.0.750.30.6 Low-voltage, low-current ope
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
