2SC5277A-2-TL-E pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SC5277A-2-TL-E Specs and Replacement

Type Designator: 2SC5277A-2-TL-E

SMD Transistor Code: D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5000 MHz

Collector Capacitance (Cc): 0.45 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT416

2SC5277A-2-TL-E Substitution

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2SC5277A-2-TL-E datasheet

4.1. Size:403K onsemi

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6.1. Size:58K sanyo

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Ordering number ENA1075 2SC5277A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5277A OSC Applications Features Low-noise NF=0.9dB typ (f=1GHz). NF=1.4dB typ (f=1.5GHz). High gain S21e 2=10dB typ (f=1.5GHz). High cut-off frequency fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1... See More ⇒

7.1. Size:134K sanyo

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Ordering number EN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2106A 2 High gain S21e =10dB typ (f=1.5GHz). [2SC5277] High cutoff frequency fT=11GHz typ. 0.75 0.3 0.6 Low-voltage, low-current ope... See More ⇒

Detailed specifications: 2SC5200BL, 2SC5200N, 2SC5226A-4-TL-E, 2SC5226A-5-TL-E, 2SC5227A-4-TB-E, 2SC5227A-5-TB-E, 2SC5231A-8-TL-E, 2SC5245A-4-TL-E, TIP122, 2SC5305, 2SC5343-G, 2SC5343-L, 2SC5343-O, 2SC5343-Y, 2SC5347AE-TD-E, 2SC5347AF-TD-E, 2SC536K