2SC5347AE-TD-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5347AE-TD-E
SMD Transistor Code: CZ
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3000 MHz
Collector Capacitance (Cc): 1.3 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT89
2SC5347AE-TD-E Transistor Equivalent Substitute - Cross-Reference Search
2SC5347AE-TD-E Datasheet (PDF)
2sc5347ae 2sc5347af.pdf
Ordering number : ENA1087A2SC5347ARF Transistorhttp://onsemi.com12V, 150mA, fT=4.7GHz, NPN Single PCPFeatures High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz) : S21e =8dB typ (f=1GHz) 2 : NF=1.8dB typ (f=1GHz)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag
2sc5347a.pdf
Ordering number : ENA1087 2SC5347ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Semi-Power Output Stage,2SC5347ALow-Noise Medium Output Amplifier ApplicationsFeatures High-frequency medium output amplification(VCE=5V, IC=50mA): fT=4.7GHz typ (f=1GHz).:S21e2=8dB typ (f=1GHz).: NF=1.8dB typ (f=1GHz).SpecificationsAbsolute
2sc5347.pdf
Ordering number:EN5512ANPN Epitaxial Planar Silicon Transistor2SC5347High-Frequency Semi-Power Output Stage,Low-Noise Medium Output Amplifiers ApplicationsFeatures Package Dimensions High frequency medium output amplificationunit:mm(VCE=5V, IC=50mA)2038A: fT=4.7GHz typ (f=1GHz).[2SC5347]2: S21e =8dB typ (f=1GHz).4.5: NF=1.8dB typ (f=1GHz). 1.51.60.4 0
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: KT646A | BF187 | DMC26403
