2SC5536A-TL-H Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5536A-TL-H
SMD Transistor Code: MA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC81
2SC5536A-TL-H Transistor Equivalent Substitute - Cross-Reference Search
2SC5536A-TL-H Datasheet (PDF)
2sc5536a.pdf
Ordering number : ENA1092 2SC5536ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF Low-Noise Amplifier,2SC5536AOSC ApplicationsFeatures Low-noise : NF=1.8dB typ (f=150MHz). High gain : S21e2=16dB typ (f=150MHz). Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm). Halogen free compliance.SpecificationsAbsolute Maximum Ra
2sc5536a.pdf
Ordering number : ENA1092A2SC5536ARF Transistorhttp://onsemi.com12V, 50mA, fT=1.7GHz, NPN Single SSFPFeatures Low-noise : NF=1.8dB typ (f=150MHz) High gain S21e =16dB typ (f=150MHz) : 2 Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings
2sc5536.pdf
Ordering number:ENN6290NPN Epitaxial Planar Silicon Transistor2SC5536VHF Low-Noise Amplifier , OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.8dB typ (f=150MHz).unit:mm2 High gain : S21e =16dB typ (f=150MHz).2159 Ultrasmall, slim flat-lead package.[2SC5536](1.4mm 0.8mm 0.6mm)1.40.10.2531 20.450.21 : Base2 : Emitter3 :
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
