2SC5536A-TL-H Specs and Replacement
Type Designator: 2SC5536A-TL-H
SMD Transistor Code: MA
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SC81
2SC5536A-TL-H Substitution
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2SC5536A-TL-H datasheet
Ordering number ENA1092 2SC5536A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF Low-Noise Amplifier, 2SC5536A OSC Applications Features Low-noise NF=1.8dB typ (f=150MHz). High gain S21e 2=16dB typ (f=150MHz). Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm). Halogen free compliance. Specifications Absolute Maximum Ra... See More ⇒
Ordering number ENA1092A 2SC5536A RF Transistor http //onsemi.com 12V, 50mA, fT=1.7GHz, NPN Single SSFP Features Low-noise NF=1.8dB typ (f=150MHz) High gain S21e =16dB typ (f=150MHz) 2 Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings ... See More ⇒
Ordering number ENN6290 NPN Epitaxial Planar Silicon Transistor 2SC5536 VHF Low-Noise Amplifier , OSC Applications Features Package Dimensions Low noise NF=1.8dB typ (f=150MHz). unit mm 2 High gain S21e =16dB typ (f=150MHz). 2159 Ultrasmall, slim flat-lead package. [2SC5536] (1.4mm 0.8mm 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 Base 2 Emitter 3 ... See More ⇒
Detailed specifications: 2SC536S, 2SC5374A-TL-E, 2SC5397, 2SC5415AE-TD-E, 2SC5415AF-TD-E, 2SC5488A-TL-H, 2SC5490A-TL-H, 2SC5501A-4-TR-E, S9014, 2SC5551AE-TD-E, 2SC5551AF-TD-E, 2SC5566-TD-E, 2SC5569-TD-E, 2SC5621, 2SC5625, 2SC5633, 2SC5634
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