2SC5646A-TL-H Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5646A-TL-H
SMD Transistor Code: NF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 9 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10000 MHz
Collector Capacitance (Cc): 0.55 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT523
2SC5646A-TL-H Transistor Equivalent Substitute - Cross-Reference Search
2SC5646A-TL-H Datasheet (PDF)
2sc5646a.pdf
Ordering number : ENA1120 2SC5646ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier,2SC5646AOSC ApplicationsFeatures Low-noise : NF=1.5dB typ (f=2GHz). High cut-off frequency : fT=10GHz typ (VCE=1V).: fT=12.5GHz typ (VCE=3V). Low-voltage operation. High gain : S21e2=9.5dB typ (f=2GHz). Ultrasmall
2sc5646a.pdf
Ordering number : ENA1120A2SC5646ARF Transistorhttp://onsemi.com4V, 30mA, fT=12.5GHz, NPN Single SSFPFeatures Low-noise : NF=1.5dB typ (f=2GHz) High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) Low-voltage operation High gain 2 : S21e =9.5dB typ (f=2GHz) Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Halogen
2sc5646.pdf
Ordering number : ENN66062SC5646NPN Epitaxial Planar Silicon Transistor2SC5646UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2159: fT=12.5GHz typ (VCE=3V).[2SC5646] Low operating voltage. High gain :S21e2=9.5dB typ (f=2GHz).
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
