2SC5706-TL-H Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5706-TL-H
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO252
2SC5706-TL-H Transistor Equivalent Substitute - Cross-Reference Search
2SC5706-TL-H Datasheet (PDF)
2sa2039-e 2sc5706-h 2sc5706 2sc5706.pdf
Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al
2sa2039 2sc5706.pdf
Ordering number : ENN6912B2SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin
2sa2039 2sc5706.pdf
Ordering number : ENN69122SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsFeatures Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mmmotor drivers, strobes. 2045BFeatures[2SA2039 / 2SC5706] Adoption of FBET, MBIT process.6.52.35.0 Large current capacitance.0.54
2sa2039 2sc5706.pdf
Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al
2sc5706.pdf
2SC5706NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* Large current capacitanceD-PAK(TO-252)* Low collector-to-emitter saturation voltage* High-speed switching* High allowable dissipationMechanical Data:* Case : Molded Plastic* Weight : 0.925 gramsABSOLUTE MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBO80 V
2sc5706.pdf
SMD Type TransistorsNPN Transistors2SC5706TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 Collector Current Capability IC=5A Collector Emitter Voltage VCEO=80V0.127 High-speed switching. +0.10.80-0.1max Low collector-to-emitter saturation voltage High allowable power dissipation.+ 0.11 Base2.3 0
2sc5706.pdf
isc Silicon NPN Power Transistor 2SC5706DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedHigh allowable power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA2039APPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordriversABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
