All Transistors. 2SC5876FRA Datasheet

 

2SC5876FRA Datasheet and Replacement


   Type Designator: 2SC5876FRA
   SMD Transistor Code: VS
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT323

 2SC5876FRA Transistor Equivalent Substitute - Cross-Reference Search

   

2SC5876FRA Datasheet (PDF)

 ..1. Size:1239K  rohm
2sc5876fra.pdf pdf_icon

2SC5876FRA

AEC-Q101 Qualified Medium power transistor (60V, 0.5A) 2SC5876FRA Features Dimensions (Unit mm) 1) High speed switching. (Tf Typ. 80ns at IC = 500mA) UMT3 2) Low saturation voltage, typically (Typ. 150mV at IC = 100mA, IB = 10mA) 1.25 3) Strong discharge power for inductive load and 2.1 capacitance load. 2SA2088FRA 4) Complements the 2SA2088 0.1Min. Each lea... See More ⇒

 7.1. Size:1603K  rohm
2sc5876u3.pdf pdf_icon

2SC5876FRA

2SC5876U3 Datasheet Medium power transistor (60V, 0.5A) lOutline l SOT-323 Parameter Value SC-70 VCEO 60V IC 500mA UMT3 lFeatures lInner circuit l l 1)High speed switching. (Tf Typ. 80ns at IC=500mA) 2)Low saturation voltage, typically (Typ. 150mV at IC=100mA, IB=10mA) 3)Strong discharge power for inductive load and ca... See More ⇒

 7.2. Size:1647K  rohm
2sc5876.pdf pdf_icon

2SC5876FRA

2SC5876 Datasheet Medium power transistor (60V, 0.5A) lOutline l Parameter Value UMT3 VCEO 60V IC 500mA SOT-323 SC-70 lFeatures l 1)High speed switching. lInner circuit l (Tf Typ. 80ns at IC=500mA) 2)Low saturation voltage, typically (Typ. 150mV at IC=100mA, IB=10mA) 3)Strong discharge power for ... See More ⇒

 8.1. Size:98K  rohm
2sc5875.pdf pdf_icon

2SC5876FRA

2SC5875 Transistors Power transistor (30V, 2A) 2SC5875 External dimensions (Unit mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf Typ. 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 0.1A) 0.65Max. 3) Strong discharge power for inductive load and 0.5 (1) (2) (3) capacitance load. 2.54 2.54 1.05 0.45 (1) Emitter ... See More ⇒

Datasheet: 2SC5663TGP , 2SC5706-H , 2SC5706-TL-E , 2SC5706-TL-H , 2SC5707-E , 2SC5707-TL-E , 2SC5814 , 2SC5815 , C3198 , 2SC5964-TD-E , 2SC5964-TD-H , 2SC5974 , 2SC5974A , 2SC5974B , 2SC5994-TD-E , 2SC6017-E , 2SC6017-TL-E .

History: BD377-25 | BC817K-40H | 40TA045 | 2SA1837AF | BCM56DS | BD371D-10 | BCP5516

Keywords - 2SC5876FRA transistor datasheet

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