2SC6096-TD-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC6096-TD-E
SMD Transistor Code: QG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3.5 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6.5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT89
2SC6096-TD-E Transistor Equivalent Substitute - Cross-Reference Search
2SC6096-TD-E Datasheet (PDF)
2sc6096 2sc6096-td-h.pdf
Ordering number : ENA0434A2SC6096Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati
2sc6096.pdf
Ordering number : ENA0434 2SC6096SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6096High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch
2sc6096.pdf
Ordering number : ENA0434A2SC6096Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC3425
