MJE13001A1 Specs and Replacement
Type Designator: MJE13001A1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.17 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO92
MJE13001A1 Substitution
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MJE13001A1 datasheet
MJE13001A1(3DD13001A1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg ... See More ⇒
MJE13001A2(3DD13001A2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg ... See More ⇒
MJE13001AT(3DD13001AT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg ... See More ⇒
Detailed specifications: 2SD2137A, 2SD2144S, 2SD2152, 2SD2173, 2SD2227S, 2SD2318, MJE1123, MJE13001A0, TIP41C, MJE13001A2, MJE13001AT, MJE13001B1, MJE13001C0, MJE13001C1, MJE13001C2, MJE13001CT, MJE13001DE1
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