MJE13001C1 Specs and Replacement
Type Designator: MJE13001C1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO92
MJE13001C1 Substitution
MJE13001C1 datasheet
mje13001c1.pdf
MJE13001C1 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications , , High frequency electronic li... See More ⇒
mje13001c1.pdf
MJE13001C1(3DD13001C1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.25 A PC(Ta=25 ) 1.0 W Tj 150 Tstg -55 150 /Electrical charac... See More ⇒
mje13001ct.pdf
MJE13001CT(3DD13001CT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150 stg ... See More ⇒
mje13001c0.pdf
MJE13001C0(3DD13001C0) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.25 A PC(Ta=25 ) 0.65 W Tj 150 Tstg -55 150 /Electrical chara... See More ⇒
Detailed specifications: 2SD2318 , MJE1123 , MJE13001A0 , MJE13001A1 , MJE13001A2 , MJE13001AT , MJE13001B1 , MJE13001C0 , C945 , MJE13001C2 , MJE13001CT , MJE13001DE1 , MJE13001E1 , MJE13001E2 , MJE13002DE1 , MJE13002DG1 , MJE13002E1 .
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