All Transistors. MJE13001C1 Datasheet

 

MJE13001C1 Datasheet and Replacement


   Type Designator: MJE13001C1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO92
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MJE13001C1 Datasheet (PDF)

 ..1. Size:765K  blue-rocket-elect
 mje13001c1.pdf pdf_icon

MJE13001C1

MJE13001C1 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications ,,High frequency electronic li

 ..2. Size:170K  foshan
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MJE13001C1

MJE13001C1(3DD13001C1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applications./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO 400 VVEBO 9.0 VIC 0.25 APC(Ta=25) 1.0 WTj 150 Tstg -55150 /Electrical charac

 5.1. Size:180K  foshan
 mje13001ct.pdf pdf_icon

MJE13001C1

MJE13001CT(3DD13001CT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25) 1.0 W CT 150 j T -55150 stg

 5.2. Size:188K  foshan
 mje13001c0.pdf pdf_icon

MJE13001C1

MJE13001C0(3DD13001C0) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applications./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO 400 VVEBO 9.0 VIC 0.25 APC(Ta=25) 0.65 WTj 150 Tstg -55150 /Electrical chara

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