MJE13001DE1 PDF and Equivalents Search

 

MJE13001DE1 PDF Specs and Replacement


   Type Designator: MJE13001DE1
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO92
 

 MJE13001DE1 Substitution

   - BJT ⓘ Cross-Reference Search

   

MJE13001DE1 PDF detailed specifications

 ..1. Size:243K  foshan
mje13001de1.pdf pdf_icon

MJE13001DE1

MJE13001DE1(3DD13001DE1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 ... See More ⇒

 6.1. Size:191K  utc
mje13001-p.pdf pdf_icon

MJE13001DE1

UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage V(BR)CBO=600V * Collector current IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B TO-92 B C E Tape Box MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K... See More ⇒

 6.2. Size:208K  utc
mje13001.pdf pdf_icon

MJE13001DE1

UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage V(BR)CBO=600V * Collector current IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - MJE13001G-x-AB3-A-R SOT-89 E C B Tape Reel - MJE13001G-x-AB3-F-R SOT-89 B C E Tape Reel MJE13001... See More ⇒

 6.3. Size:46K  hsmc
hmje13001.pdf pdf_icon

MJE13001DE1

Spec. No. HA200213 HI-SINCERITY Issued Date 2002.06.01 Revised Date 2005.02.05 MICROELECTRONICS CORP. Page No. 1/4 HMJE13001 NPN Triple Diffused Planar Type High Voltage Transistor Description The HMJE13001 is a medium power transistor designed for use in switching applications. TO-92 Features High breakdown voltage Low collector saturation voltage Fast switch... See More ⇒

Detailed specifications: MJE13001A1 , MJE13001A2 , MJE13001AT , MJE13001B1 , MJE13001C0 , MJE13001C1 , MJE13001C2 , MJE13001CT , 2N3055 , MJE13001E1 , MJE13001E2 , MJE13002DE1 , MJE13002DG1 , MJE13002E1 , MJE13002E2 , MJE13002F1 , MJE13002F2 .

Keywords - MJE13001DE1 pdf specs

 MJE13001DE1 cross reference
 MJE13001DE1 equivalent finder
 MJE13001DE1 pdf lookup
 MJE13001DE1 substitution
 MJE13001DE1 replacement

 

 
Back to Top

 


MJE13001DE1  MJE13001DE1  MJE13001DE1 

social 

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y

 

 

 
Back to Top

 

Popular searches

2n3405 | 2n3567 | 2sc1226 | 2sd180 | 2sd235 | k3502 datasheet | p0903bdg datasheet | 2sa722

 


 
.