All Transistors. MJE13002F1 Datasheet

 

MJE13002F1 Datasheet and Replacement


   Type Designator: MJE13002F1
   SMD Transistor Code: BR13002F1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO92
 

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MJE13002F1 Datasheet (PDF)

 ..1. Size:407K  blue-rocket-elect
 mje13002f1.pdf pdf_icon

MJE13002F1

MJE13002F1(BR3DD13002F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

 5.1. Size:199K  foshan
 mje13002f5.pdf pdf_icon

MJE13002F1

MJE13002F5(3DD13002F5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.2. Size:197K  foshan
 mje13002f6.pdf pdf_icon

MJE13002F1

MJE13002F6(3DD13002F6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.3. Size:193K  foshan
 mje13002f2.pdf pdf_icon

MJE13002F1

MJE13002F2(3DD13002F2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

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Datasheet: MJE13001CT , MJE13001DE1 , MJE13001E1 , MJE13001E2 , MJE13002DE1 , MJE13002DG1 , MJE13002E1 , MJE13002E2 , 2SA1943 , MJE13002F2 , MJE13002F5 , MJE13002F6 , MJE13002G , MJE13002G1 , MJE13002G2 , MJE13002G5 , MJE13002G6 .

History: NA12HI

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