MJE13002F1 Specs and Replacement
Type Designator: MJE13002F1
SMD Transistor Code: BR13002F1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO92
MJE13002F1 Substitution
MJE13002F1 datasheet
mje13002f1.pdf
MJE13002F1(BR3DD13002F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc... See More ⇒
mje13002f5.pdf
MJE13002F5(3DD13002F5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒
mje13002f6.pdf
MJE13002F6(3DD13002F6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒
mje13002f2.pdf
MJE13002F2(3DD13002F2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒
Detailed specifications: MJE13001CT , MJE13001DE1 , MJE13001E1 , MJE13001E2 , MJE13002DE1 , MJE13002DG1 , MJE13002E1 , MJE13002E2 , TIP122 , MJE13002F2 , MJE13002F5 , MJE13002F6 , MJE13002G , MJE13002G1 , MJE13002G2 , MJE13002G5 , MJE13002G6 .
History: MMDT2907AQ | 2N6186 | BLX53
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History: MMDT2907AQ | 2N6186 | BLX53
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