All Transistors. MJE13002H1 Datasheet

 

MJE13002H1 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJE13002H1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO92

MJE13002H1 Transistor Equivalent Substitute - Cross-Reference Search

MJE13002H1 Datasheet (PDF)

1.1. mje13002h1.pdf Size:181K _update

MJE13002H1
MJE13002H1

MJE13002H1(3DD13002H1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.2. mje13002h6.pdf Size:189K _update

MJE13002H1
MJE13002H1

MJE13002H6(3DD13002H6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.3. mje13002h5.pdf Size:236K _update

MJE13002H1
MJE13002H1

MJE13002H5(3DD13002H5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

Datasheet: MJE13002F2 , MJE13002F5 , MJE13002F6 , MJE13002G , MJE13002G1 , MJE13002G2 , MJE13002G5 , MJE13002G6 , BC549 , MJE13002H5 , MJE13002H6 , MJE13002I5 , MJE13002I6 , MJE13002I7 , MJE13002VH1 , MJE13003DG1 , MJE13003DG5 .

 


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