MJE13002I7 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE13002I7
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
MJE13002I7 Transistor Equivalent Substitute - Cross-Reference Search
MJE13002I7 Datasheet (PDF)
1.1. mje13002i6.pdf 
Size:209K _update
MJE13002I6(3DD13002I6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V
1.2. mje13002i5.pdf Size:208K _update
MJE13002I5(3DD13002I5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V
1.3. mje13002i7.pdf Size:216K _update
MJE13002I7(3DD13002I7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V
Datasheet: MJE13002G2 , MJE13002G5 , MJE13002G6 , MJE13002H1 , MJE13002H5 , MJE13002H6 , MJE13002I5 , MJE13002I6 , BC558 , MJE13002VH1 , MJE13003DG1 , MJE13003DG5 , MJE13003DI1 , MJE13003DI3 , MJE13003DI5 , MJE13003DK1 , MJE13003DK3 .
