All Transistors. MJE13002I7 Datasheet

 

MJE13002I7 Datasheet and Replacement


   Type Designator: MJE13002I7
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220
 

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MJE13002I7 Datasheet (PDF)

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MJE13002I7

MJE13002I7(3DD13002I7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.1. Size:209K  foshan
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MJE13002I7

MJE13002I6(3DD13002I6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.2. Size:208K  foshan
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MJE13002I7

MJE13002I5(3DD13002I5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 6.1. Size:304K  motorola
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MJE13002I7

Order this documentMOTOROLAby MJE13002/DSEMICONDUCTOR TECHNICAL DATA*MJE13002MJE13003*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series1.5 AMPERENPN SILICONNPN Silicon Power TransistorsPOWER TRANSISTORS300 AND 400 VOLTSThese devices are designed for highvoltage, highspeed power switching40 WATTSinductive circuits where fall time is criti

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2DA1774Q | NB013FK | BF423A3 | TP5129 | MJH16008 | RN1908FE | 2SC1762-2

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