MJE13002I7 Datasheet and Replacement

   Type Designator: MJE13002I7
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220

MJE13002I7 Substitution

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MJE13002I7 Datasheet (PDF)

..1. Size:216K foshan
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MJE13002I7(3DD13002I7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

5.1. Size:209K foshan
mje13002i6.pdf pdf_icon

MJE13002I6(3DD13002I6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

5.2. Size:208K foshan
mje13002i5.pdf pdf_icon

MJE13002I5(3DD13002I5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.1. Size:304K motorola
mje13002.pdf pdf_icon

Order this documentMOTOROLAby MJE13002/DSEMICONDUCTOR TECHNICAL DATA*MJE13002MJE13003*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series1.5 AMPERENPN SILICONNPN Silicon Power TransistorsPOWER TRANSISTORS300 AND 400 VOLTSThese devices are designed for highvoltage, highspeed power switching40 WATTSinductive circuits where fall time is criti

6.2. Size:276K utc
mje13002-e.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motorcon

6.3. Size:303K utc
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UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in highvolatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motor co

6.4. Size:278K utc
mje13002.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motorcontrol

6.5. Size:248K cdil
mje13002 13003.pdf pdf_icon

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002MJE13003TO-126 Plastic PackageSuitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers andDeflection CircuitsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL MJE13002 MJE13003 UNITVCEO(sus)Collector Emitter Voltage 300

6.6. Size:365K sisemi
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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE / MJE SERIES TRANSISTORS MJE13002AHTNPN MJE / MJE SERIES TRANSISTORS MJE13002AHTNPN MJE

6.7. Size:445K sisemi
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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHTNPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT

6.8. Size:407K blue-rocket-elect
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MJE13002F1(BR3DD13002F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

6.9. Size:456K blue-rocket-elect
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MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

6.10. Size:456K blue-rocket-elect
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6.11. Size:592K blue-rocket-elect
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MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High freque

6.12. Size:78K first silicon
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SEMICONDUCTOR MJE13002BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=0.5S(Max.), tf=0.7S(Max.), at IC=0.8AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_

6.13. Size:199K foshan
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MJE13002F5(3DD13002F5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.14. Size:195K foshan
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MJE13002VH1(3DD13002VH1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

6.15. Size:189K foshan
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MJE13002H6(3DD13002H6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.16. Size:181K foshan
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MJE13002H1(3DD13002H1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.17. Size:197K foshan
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MJE13002F6(3DD13002F6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.18. Size:236K foshan
mje13002h5.pdf pdf_icon

MJE13002H5(3DD13002H5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.19. Size:218K foshan
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MJE13002G2(3DD13002G2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.20. Size:269K foshan
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MJE13002G5(3DD13002G5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.21. Size:240K foshan
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MJE13002DE1(3DD13002DE1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600

6.22. Size:213K foshan
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MJE13002G1(3DD13002G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.23. Size:220K foshan
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MJE13002G6(3DD13002G6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.24. Size:193K foshan
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MJE13002F2(3DD13002F2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

6.25. Size:120K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13002 DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN DESCRIPTION1 Base Collector;

Datasheet: MJE13002G2 , MJE13002G5 , MJE13002G6 , MJE13002H1 , MJE13002H5 , MJE13002H6 , MJE13002I5 , MJE13002I6 , S8050 , MJE13002VH1 , MJE13003DG1 , MJE13003DG5 , MJE13003DI1 , MJE13003DI3 , MJE13003DI5 , MJE13003DK1 , MJE13003DK3 .