All Transistors. MJE13002VH1 Datasheet

 

MJE13002VH1 Transistor. Datasheet pdf. Equivalent

Type Designator: MJE13002VH1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO92

MJE13002VH1 Transistor Equivalent Substitute - Cross-Reference Search

MJE13002VH1 Datasheet (PDF)

1.1. mje13002vh1.pdf Size:195K _update

MJE13002VH1
MJE13002VH1

MJE13002VH1(3DD13002VH1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

2.1. mje13002i6.pdf Size:209K _update

MJE13002VH1
MJE13002VH1

MJE13002I6(3DD13002I6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.2. mje13002g6.pdf Size:220K _update

MJE13002VH1
MJE13002VH1

MJE13002G6(3DD13002G6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.3. mje13002g1.pdf Size:213K _update

MJE13002VH1
MJE13002VH1

MJE13002G1(3DD13002G1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.4. mje13002e1.pdf Size:456K _update

MJE13002VH1
MJE13002VH1

MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High frequenc

2.5. mje13002de1.pdf Size:240K _update

MJE13002VH1
MJE13002VH1

MJE13002DE1(3DD13002DE1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600

2.6. mje13002dg1.pdf Size:592K _update

MJE13002VH1
MJE13002VH1

MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High freque

2.7. mje13002i5.pdf Size:208K _update

MJE13002VH1
MJE13002VH1

MJE13002I5(3DD13002I5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.8. mje13002g5.pdf Size:269K _update

MJE13002VH1
MJE13002VH1

MJE13002G5(3DD13002G5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.9. mje13002h1.pdf Size:181K _update

MJE13002VH1
MJE13002VH1

MJE13002H1(3DD13002H1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.10. mje13002g2.pdf Size:218K _update

MJE13002VH1
MJE13002VH1

MJE13002G2(3DD13002G2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.11. mje13002f1.pdf Size:407K _update

MJE13002VH1
MJE13002VH1

MJE13002F1(BR3DD13002F1K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High frequenc

2.12. mje13002h6.pdf Size:189K _update

MJE13002VH1
MJE13002VH1

MJE13002H6(3DD13002H6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.13. mje13002g.pdf Size:303K _update

MJE13002VH1
MJE13002VH1

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor co

2.14. mje13002e2.pdf Size:456K _update

MJE13002VH1
MJE13002VH1

MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High frequenc

2.15. mje13002f5.pdf Size:199K _update

MJE13002VH1
MJE13002VH1

MJE13002F5(3DD13002F5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.16. mje13002f2.pdf Size:193K _update

MJE13002VH1
MJE13002VH1

MJE13002F2(3DD13002F2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.17. mje13002i7.pdf Size:216K _update

MJE13002VH1
MJE13002VH1

MJE13002I7(3DD13002I7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.18. mje13002h5.pdf Size:236K _update

MJE13002VH1
MJE13002VH1

MJE13002H5(3DD13002H5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.19. mje13002f6.pdf Size:197K _update

MJE13002VH1
MJE13002VH1

MJE13002F6(3DD13002F6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

2.20. mje13002.pdf Size:304K _motorola

MJE13002VH1
MJE13002VH1

Order this document MOTOROLA by MJE13002/D SEMICONDUCTOR TECHNICAL DATA * MJE13002 MJE13003* Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 1.5 AMPERE NPN SILICON NPN Silicon Power Transistors POWER TRANSISTORS 300 AND 400 VOLTS These devices are designed for highvoltage, highspeed power switching 40 WATTS inductive circuits where fall time is critical. They

2.21. mje13002.pdf Size:278K _utc

MJE13002VH1
MJE13002VH1

UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, S

2.22. mje13002-e.pdf Size:276K _utc

MJE13002VH1
MJE13002VH1

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor contro

2.23. mje13002_13003.pdf Size:248K _cdil

MJE13002VH1
MJE13002VH1

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13002 MJE13003 UNIT VCEO(sus) Collector Emitter Voltage 300 40

2.24. mje13002.pdf Size:120K _inchange_semiconductor

MJE13002VH1
MJE13002VH1

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

2.25. mje13002aht.pdf Size:365K _sisemi

MJE13002VH1
MJE13002VH1

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE / MJE SERIES TRANSISTORS MJE13002AHT NPN MJE / MJE SERIES TRANSISTORS MJE13002AHT NPN MJE

2.26. mje13002aht_1.pdf Size:445K _sisemi

MJE13002VH1
MJE13002VH1

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT NPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT

2.27. mje13002b.pdf Size:78K _first_silicon

MJE13002VH1
MJE13002VH1

SEMICONDUCTOR MJE13002B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=0.5μS(Max.), tf=0.7μS(Max.), at IC=0.8A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _

Datasheet: MJE13002G1 , MJE13002G2 , MJE13002G5 , MJE13002G6 , MJE13002H1 , MJE13002H5 , MJE13002H6 , MJE13002I5 , 2N2907 , MJE13002I7 , MJE13002VH1 , MJE13003DG1 , MJE13003DG5 , MJE13003DI1 , MJE13003DI3 , MJE13003DI5 , MJE13003DK1 .

 


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