All Transistors. MJE13003DG5 Datasheet

 

MJE13003DG5 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE13003DG5
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO126

 MJE13003DG5 Transistor Equivalent Substitute - Cross-Reference Search

   

MJE13003DG5 Datasheet (PDF)

 ..1. Size:428K  foshan
mje13003dg5.pdf

MJE13003DG5
MJE13003DG5

MJE13003DG5(3DD13003DG5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700

 4.1. Size:412K  foshan
mje13003dg1.pdf

MJE13003DG5
MJE13003DG5

MJE13003DG1(3DD13003DG1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.1. Size:204K  utc
mje13003d.pdf

MJE13003DG5
MJE13003DG5

UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread

 5.2. Size:126K  utc
mje13003d-p.pdf

MJE13003DG5
MJE13003DG5

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters W

 5.3. Size:51K  hsmc
hmje13003d.pdf

MJE13003DG5
MJE13003DG5

Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-126ML Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings

 5.4. Size:232K  sisemi
mje13003d 1.pdf

MJE13003DG5
MJE13003DG5

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

 5.5. Size:477K  sisemi
mje13003d.pdf

MJE13003DG5
MJE13003DG5

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

 5.6. Size:913K  blue-rocket-elect
mje13003di1g.pdf

MJE13003DG5
MJE13003DG5

MJE13003DI1G Rev.B May.-2020 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. HF Product. / Applications

 5.7. Size:299K  first silicon
mje13003d.pdf

MJE13003DG5
MJE13003DG5

SEMICONDUCTORMJE13003DTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.AICJFEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0ADIM MILLIMETERSA 6 50 0 2High Collector Voltage : VCBO=700V.B 5 60 0 2C 5 20 0 2D 1 50 0 2MAXIMUM RATING (Ta=25C)E 2 70 0 2F 2 30 0 1

 5.8. Size:261K  foshan
mje13003dn5.pdf

MJE13003DG5
MJE13003DG5

MJE13003DN5(3DD13003DN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.9. Size:238K  foshan
mje13003dk1.pdf

MJE13003DG5
MJE13003DG5

MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.10. Size:346K  foshan
mje13003di5.pdf

MJE13003DG5
MJE13003DG5

MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

 5.11. Size:291K  foshan
mje13003di1.pdf

MJE13003DG5
MJE13003DG5

MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.12. Size:238K  foshan
mje13003dk3.pdf

MJE13003DG5
MJE13003DG5

MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.13. Size:246K  foshan
mje13003dk5.pdf

MJE13003DG5
MJE13003DG5

MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.14. Size:302K  foshan
mje13003di3.pdf

MJE13003DG5
MJE13003DG5

MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

 5.15. Size:244K  foshan
mje13003dk7.pdf

MJE13003DG5
MJE13003DG5

MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.16. Size:128K  inchange semiconductor
mje13003d.pdf

MJE13003DG5
MJE13003DG5

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 7

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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