MJE13003G Datasheet and Replacement
Type Designator: MJE13003G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 21 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO126
MJE13003G Substitution
MJE13003G Datasheet (PDF)
mje13003g.pdf

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat
mje13003g1.pdf

MJE13003G1(3DD13003G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003g5.pdf

MJE13003G5(3DD13003G5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003g6.pdf

MJE13003G6(3DD13003G6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
Datasheet: MJE13003DK7 , MJE13003DN5 , MJE13003E1 , MJE13003F1 , MJE13003F2 , MJE13003F5 , MJE13003F6 , MJE13003FT , 9014 , MJE13003G1 , MJE13003G5 , MJE13003G6 , MJE13003H1 , MJE13003H3 , MJE13003H5 , MJE13003H6 , MJE13003HK5 .
History: 2SC2338 | DDTA143ECA | NB223HG
Keywords - MJE13003G transistor datasheet
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History: 2SC2338 | DDTA143ECA | NB223HG



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