MJE13003G Datasheet. Specs and Replacement

Type Designator: MJE13003G  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 21 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO126

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MJE13003G datasheet

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MJE13003G

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat... See More ⇒

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MJE13003G

MJE13003G1(3DD13003G1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒

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MJE13003G

MJE13003G5(3DD13003G5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒

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MJE13003G

MJE13003G6(3DD13003G6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒

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Detailed specifications: MJE13003DK7, MJE13003DN5, MJE13003E1, MJE13003F1, MJE13003F2, MJE13003F5, MJE13003F6, MJE13003FT, BC558, MJE13003G1, MJE13003G5, MJE13003G6, MJE13003H1, MJE13003H3, MJE13003H5, MJE13003H6, MJE13003HK5

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