MJE13003G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE13003G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Capacitancia de salida (Cc): 21 pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO126
Búsqueda de reemplazo de MJE13003G
MJE13003G Datasheet (PDF)
mje13003g.pdf

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat
mje13003g1.pdf

MJE13003G1(3DD13003G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003g5.pdf

MJE13003G5(3DD13003G5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003g6.pdf

MJE13003G6(3DD13003G6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
Otros transistores... MJE13003DK7 , MJE13003DN5 , MJE13003E1 , MJE13003F1 , MJE13003F2 , MJE13003F5 , MJE13003F6 , MJE13003FT , 9014 , MJE13003G1 , MJE13003G5 , MJE13003G6 , MJE13003H1 , MJE13003H3 , MJE13003H5 , MJE13003H6 , MJE13003HK5 .



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