MJE13003VK3 Datasheet. Specs and Replacement

Type Designator: MJE13003VK3  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO251

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MJE13003VK3 datasheet

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MJE13003VK3

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore... See More ⇒

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MJE13003VK3

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V ... See More ⇒

 4.3. Size:232K  foshan

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Detailed specifications: MJE13003VF1, MJE13003VG1, MJE13003VG5, MJE13003VH1, MJE13003VH5, MJE13003VI1, MJE13003VI5, MJE13003VK1, B647, MJE13003VK5, MJE13003VK7, MJE13003VN5, MJE13003VN7, MJE13004P1, MJE13004P3, MJE13005A, MJE13005DC

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