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MJF15030G Specs and Replacement


   Type Designator: MJF15030G
   SMD Transistor Code: MJF15030
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220

 MJF15030G Transistor Equivalent Substitute - Cross-Reference Search

   

MJF15030G detailed specifications

 ..1. Size:134K  onsemi
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MJF15030G

MJF15030 (NPN), MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general-purpose amplifier and switching applications, http //onsemi.com where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER TRANSISTORS Electrically Similar to the Popular MJE... See More ⇒

 6.1. Size:246K  motorola
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MJF15030G

Order this document MOTOROLA by MJF15030/D SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 Complementary Power PNP MJF15031 Transistors For Isolated Package Applications Designed for general purpose amplifier and switching applications, where the COMPLEMENTARY mounting surface of the device is required to be electrically isolated from the heatsink SILICON or chassis. POWER TRANSISTO... See More ⇒

 6.2. Size:128K  onsemi
mjf15030 mjf15031.pdf pdf_icon

MJF15030G

MJF15030 (NPN), MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general-purpose amplifier and switching applications, http //onsemi.com where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER TRANSISTORS Electrically Similar to the Popular MJE... See More ⇒

 6.3. Size:208K  inchange semiconductor
mjf15030.pdf pdf_icon

MJF15030G

isc Silicon NPN Power Transistor MJF15030 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJF15031 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and swi... See More ⇒

Detailed specifications: MJE702G , MJE703G , MJE800G , MJE802G , MJE803G , MJF122G , MJF127G , MJF13009 , BD136 , MJF15031G , MJF18004G , MJF18008G , MJF2955G , MJF3055G , MJF31CG , MJF32CG , MJF44H11G .

Keywords - MJF15030G transistor specs

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