MJF2955G
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJF2955G
SMD Transistor Code: F2955
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Base Voltage |Vcb|: 90
V
Maximum Collector-Emitter Voltage |Vce|: 90
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 2
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO220F
MJF2955G
Transistor Equivalent Substitute - Cross-Reference Search
MJF2955G
Datasheet (PDF)
..1. Size:115K onsemi
mjf2955g.pdf
MJF3055 (NPN),MJF2955 (PNP)ComplementarySilicon Power TransistorsSpecifically designed for general purpose amplifier and switchingapplications.http://onsemi.comFeaturesCOMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955TPOWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90
7.1. Size:156K motorola
mjf3055 mjf2955.pdf
Order this documentMOTOROLAby MJF3055/DSEMICONDUCTOR TECHNICAL DATANPNMJF3055ComplementaryPNPMJF2955Silicon Power Transistors. . . specifically designed for general purpose amplifier and switching applications. Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T COMPLEMENTARY CollectorEmitter Sustaining V
7.2. Size:183K onsemi
mjf3055 mjf2955.pdf
MJF3055 (NPN),MJF2955 (PNP)ComplementarySilicon Power TransistorsSpecifically designed for general purpose amplifier and switchingapplications.http://onsemi.comFeaturesCOMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955TPOWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90
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