MJF2955G Datasheet. Specs and Replacement

Type Designator: MJF2955G  📄📄 

SMD Transistor Code: F2955

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 90 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220F

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MJF2955G datasheet

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MJF2955G

MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. http //onsemi.com Features COMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T POWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90 ... See More ⇒

 7.1. Size:156K  motorola

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MJF2955G

Order this document MOTOROLA by MJF3055/D SEMICONDUCTOR TECHNICAL DATA NPN MJF3055 Complementary PNP MJF2955 Silicon Power Transistors . . . specifically designed for general purpose amplifier and switching applications. Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T COMPLEMENTARY Collector Emitter Sustaining V... See More ⇒

 7.2. Size:183K  onsemi

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MJF2955G

MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. http //onsemi.com Features COMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T POWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90 ... See More ⇒

Detailed specifications: MJE803G, MJF122G, MJF127G, MJF13009, MJF15030G, MJF15031G, MJF18004G, MJF18008G, D667, MJF3055G, MJF31CG, MJF32CG, MJF44H11G, MJF45H11G, MJF47G, MJF6388G, MJF6668

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