MJF45H11G Specs and Replacement
Type Designator: MJF45H11G
SMD Transistor Code: F45H11
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 230 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220F
MJF45H11G Substitution
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MJF45H11G datasheet
MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http //onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in SILICON POWER TRANSISTORS applications such as switching regulators, converters and power 10 AMPERES amplifiers. 80 VOLTS, 36 ... See More ⇒
MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http //onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in SILICON POWER TRANSISTORS applications such as switching regulators, converters and power 10 AMPERES amplifiers. 80 VOLTS, 36 ... See More ⇒
isc Silicon PNP Power Transistors MJF45H11 DESCRIPTION Low Collector Saturation Voltage- V = -1.0V(Max.)@ I = -8A CE(sat) C Fast Switching Speeds Complement to Type MJF44H11 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplification and switching such as output or driver stages in applic... See More ⇒
Detailed specifications: MJF15031G, MJF18004G, MJF18008G, MJF2955G, MJF3055G, MJF31CG, MJF32CG, MJF44H11G, 2SC5200, MJF47G, MJF6388G, MJF6668, MJF6668G, MJH11017G, MJH11019G, MJH11020G, MJH11021G
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