MJF45H11G Datasheet and Replacement
Type Designator: MJF45H11G
SMD Transistor Code: F45H11
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 230 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220F
MJF45H11G Datasheet (PDF)
mjf45h11g.pdf
MJF44H11 (NPN),MJF45H11 (PNP)Preferred DevicesComplementaryPower TransistorsFor Isolated Package Applicationshttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages inSILICON POWER TRANSISTORSapplications such as switching regulators, converters and power10 AMPERESamplifiers.80 VOLTS, 36
mjf44h11 mjf45h11.pdf
MJF44H11 (NPN),MJF45H11 (PNP)Preferred DevicesComplementaryPower TransistorsFor Isolated Package Applicationshttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages inSILICON POWER TRANSISTORSapplications such as switching regulators, converters and power10 AMPERESamplifiers.80 VOLTS, 36
mjf45h11.pdf
isc Silicon PNP Power Transistors MJF45H11DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max.)@ I = -8ACE(sat) CFast Switching SpeedsComplement to Type MJF44H11Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitching such as output or driver stages in applic
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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