MJF45H11G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJF45H11G  📄📄 

Código: F45H11

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 36 W

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 230 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO220F

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MJF45H11G datasheet

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MJF45H11G

MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http //onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in SILICON POWER TRANSISTORS applications such as switching regulators, converters and power 10 AMPERES amplifiers. 80 VOLTS, 36

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MJF45H11G

MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http //onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in SILICON POWER TRANSISTORS applications such as switching regulators, converters and power 10 AMPERES amplifiers. 80 VOLTS, 36

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MJF45H11G

isc Silicon PNP Power Transistors MJF45H11 DESCRIPTION Low Collector Saturation Voltage- V = -1.0V(Max.)@ I = -8A CE(sat) C Fast Switching Speeds Complement to Type MJF44H11 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplification and switching such as output or driver stages in applic

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