MJF6388G Specs and Replacement

Type Designator: MJF6388G

SMD Transistor Code: MJF6388

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO220F

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MJF6388G datasheet

 ..1. Size:153K  onsemi

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MJF6388G

MJF6388 (NPN), MJF6668 (PNP) Preferred Device Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching http //onsemi.com applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER DARLINGTONS Isolated Overmold Pac... See More ⇒

 7.1. Size:338K  motorola

 mjf6388r mjf6668.pdf pdf_icon

MJF6388G

Order this document MOTOROLA by MJF6388/D SEMICONDUCTOR TECHNICAL DATA NPN MJF6388* Complementary Power PNP MJF6668* Darlingtons For Isolated Package Applications *Motorola Preferred Devices Designed for general purpose amplifiers and switching applications, where the COMPLEMENTARY mounting surface of the device is required to be electrically isolated from the heatsink SILICON ... See More ⇒

Detailed specifications: MJF18008G, MJF2955G, MJF3055G, MJF31CG, MJF32CG, MJF44H11G, MJF45H11G, MJF47G, BD139, MJF6668, MJF6668G, MJH11017G, MJH11019G, MJH11020G, MJH11021G, MJH11022G, MJH16010

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