MJH11020G Specs and Replacement
Type Designator: MJH11020G
SMD Transistor Code: MJH11020
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 400
MJH11020G Substitution
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MJH11020G datasheet
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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒
Detailed specifications: MJF44H11G, MJF45H11G, MJF47G, MJF6388G, MJF6668, MJF6668G, MJH11017G, MJH11019G, C1815, MJH11021G, MJH11022G, MJH16010, MJH16010A, MJH16012, MJH16018, MJH6284G, MJH6287G
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