MJH11020G Specs and Replacement

Type Designator: MJH11020G

SMD Transistor Code: MJH11020

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO218 TO247

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MJH11020G datasheet

 ..1. Size:141K  onsemi

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MJH11020G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒

 6.1. Size:212K  motorola

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MJH11020G

Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo... See More ⇒

 7.1. Size:141K  onsemi

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MJH11020G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒

 7.2. Size:141K  onsemi

mjh11021g.pdf pdf_icon

MJH11020G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒

Detailed specifications: MJF44H11G, MJF45H11G, MJF47G, MJF6388G, MJF6668, MJF6668G, MJH11017G, MJH11019G, C1815, MJH11021G, MJH11022G, MJH16010, MJH16010A, MJH16012, MJH16018, MJH6284G, MJH6287G

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