All Transistors. MJH11020G Datasheet

 

MJH11020G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJH11020G
   SMD Transistor Code: MJH11020
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO218 TO247

 MJH11020G Transistor Equivalent Substitute - Cross-Reference Search

   

MJH11020G Datasheet (PDF)

 ..1. Size:141K  onsemi
mjh11020g.pdf

MJH11020G
MJH11020G

MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

 6.1. Size:212K  motorola
mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf

MJH11020G
MJH11020G

Order this documentMOTOROLAby MJH11017/DSEMICONDUCTOR TECHNICAL DATAMJH10012(See MJ10012)Complementary DarlingtonPNPSilicon Power Transistors*MJH11017. . . designed for use as general purpose amplifiers, low frequency switching andmotor control applications.MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) CollectorEmitter Sustaining Vo

 7.1. Size:141K  onsemi
mjh11022g.pdf

MJH11020G
MJH11020G

MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

 7.2. Size:141K  onsemi
mjh11021g.pdf

MJH11020G
MJH11020G

MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

 7.3. Size:269K  inchange semiconductor
mjh11022.pdf

MJH11020G
MJH11020G

isc Silicon NPN Darlington Power Transistor MJH11022DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 250V (Min.)CEO(SUS)High DC Current Gain: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5.0ACE (sat) CComplement to Type MJH11021Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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