MJH16010A Datasheet, Equivalent, Cross Reference Search
Type Designator: MJH16010A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 135 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO218
MJH16010A Transistor Equivalent Substitute - Cross-Reference Search
MJH16010A Datasheet (PDF)
7.3. Size:219K inchange semiconductor
mjh16018.pdf
mjh16018.pdf
isc Silicon NPN Power Transistor MJH16018DESCRIPTIONCollector-Emitter Voltage-: V = 800V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed , power switching ininductive circuits where fall time is critical. They are particu-larly suited for line operated swi
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
