All Transistors. MJH16010A Datasheet

 

MJH16010A Datasheet, Equivalent, Cross Reference Search

Type Designator: MJH16010A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 135 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO218

MJH16010A Transistor Equivalent Substitute - Cross-Reference Search

 

MJH16010A Datasheet (PDF)

1.1. mjh16010a.pdf Size:844K _update

MJH16010A
MJH16010A



2.1. mjh16010.pdf Size:119K _update

MJH16010A
MJH16010A



 3.1. mjh16012.pdf Size:119K _update

MJH16010A
MJH16010A



3.2. mjh16018.pdf Size:97K _update

MJH16010A
MJH16010A



 3.3. mjh16018.pdf Size:143K _inchange_semiconductor

MJH16010A
MJH16010A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJH16018 DESCRIPTION ·Collector-Emitter Voltage- : VCEO(SUS)= 800V(Min) ·Fast Turn-Off Time APPLICATIONS Designed for high-voltage, high-speed , power switching in inductive circuits where fall time is critical. They are particu- larly suited for line operated switchmode applications as: ·Switc

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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