MJL1302AG Datasheet, Equivalent, Cross Reference Search
Type Designator: MJL1302AG
SMD Transistor Code: MJL1302A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 260 V
Maximum Collector-Emitter Voltage |Vce|: 260 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO264
MJL1302AG Transistor Equivalent Substitute - Cross-Reference Search
MJL1302AG Datasheet (PDF)
mjl1302ag.pdf
MJL3281A (NPN) MJL1302A (PNP)Preferred DevicesComplementary BipolarPower TransistorsFeatures Exceptional Safe Operating Area http://onsemi.com NPN/PNP Gain Matching within 10% from 50 mA to 5 A15 AMPERES Excellent Gain Linearity High BVCEOCOMPLEMENTARY High FrequencySILICON POWER Pb-Free Packages are AvailableTRANSISTORSBenefits260 VOLTS
mjl3281a mjl1302a.pdf
Order this documentMOTOROLAby MJL3281A/DSEMICONDUCTOR TECHNICAL DATANPN*MJL3281APNPDesigner's Data Sheet*MJL1302AComplementary NPN-PNP*Motorola Preferred DeviceSilicon Power Bipolar Transistor15 AMPERE The MJL3281A and MJL1302A are PowerBase power transistors for high powerCOMPLEMENTARYaudio, disk head positioners and other linear applications.SILICON P
mjl3281a mjl1302a.pdf
MJL3281A (NPN) MJL1302A (PNP)Complementary BipolarPower TransistorsFeatureshttp://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A15 AMPERES Excellent Gain LinearityCOMPLEMENTARY High BVCEOSILICON POWER High FrequencyTRANSISTORS These Devices are Pb-Free and are RoHS Compliant*Benefits 260 VOLTS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
