All Transistors. MJW21192 Datasheet

 

MJW21192 Transistor. Datasheet pdf. Equivalent

Type Designator: MJW21192

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO247

MJW21192 Transistor Equivalent Substitute - Cross-Reference Search

MJW21192 Datasheet (PDF)

1.1. mjw21192.pdf Size:110K _update

MJW21192
MJW21192

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION ·With TO-247 package ·Complement to type MJW21191 ·Wild area of safe operation APPLICATIONS ·Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter ABSOL

1.2. mjw21192_mjw21191.pdf Size:150K _motorola

MJW21192
MJW21192

Order this document MOTOROLA by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic PNP Power Transistors MJW21191 Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms 8.0 AMPERES TO

1.3. mjw21192_mjw21191.pdf Size:155K _onsemi

MJW21192
MJW21192

MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperature http://onsemi.com All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms 8.0 A TO-247AE Package POWER TRANSISTORS Pb-Free Packages are Available

1.4. mjw21192.pdf Size:227K _inchange_semiconductor

MJW21192
MJW21192

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJW21192 DESCRIPTION ·DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for power audio output, or high power drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 150 V VCEO Collector-Emitter Voltage 150 V V

Datasheet: MJL21194G , MJL21195G , MJL21196G , MJL3281AG , MJL4281AG , MJL4302AG , MJW1302AG , MJW21191 , BC148 , MJW21193G , MJW21194G , MJW21195G , MJW21196G , MJW3281AG , 3CD010 , 3CD020 , 3CD030 .

 


MJW21192
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MJW21192
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