All Transistors. MJW3281AG Datasheet

 

MJW3281AG Datasheet, Equivalent, Cross Reference Search

Type Designator: MJW3281AG

Marking Code: MJW3281A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 230 V

Maximum Collector-Emitter Voltage |Vce|: 230 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 600 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO247

MJW3281AG Transistor Equivalent Substitute - Cross-Reference Search

 

MJW3281AG Datasheet (PDF)

1.1. mjw3281ag.pdf Size:150K _update

MJW3281AG
MJW3281AG

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors http://onsemi.com The MJW3281A and MJW1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear 15 AMPERES applications. COMPLEMENTARY Features SILICON POWER TRANSISTORS • Designed for 100 W Audio Frequency 230 VOLTS 200 WATTS • Gain Complementary:

2.1. mjw3281a mjw1302a.pdf Size:154K _onsemi

MJW3281AG
MJW3281AG

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors http://onsemi.com The MJW3281A and MJW1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear 15 AMPERES applications. COMPLEMENTARY Features SILICON POWER TRANSISTORS Designed for 100 W Audio Frequency 230 VOLTS 200 WATTS Gain Complementary: Gain Li

Datasheet: MJL4302AG , MJW1302AG , MJW21191 , MJW21192 , MJW21193G , MJW21194G , MJW21195G , MJW21196G , BC327 , 3CD010 , 3CD020 , 3CD030 , 3CD050 , 3CD075 , 3CD1 , 3CD100 , 3CD1010 .

 


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