3CD030 Specs and Replacement
Type Designator: 3CD030
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO257
3CD030 Substitution
- BJT ⓘ Cross-Reference Search
3CD030 datasheet
3CD030 PNP A B C D E F G H PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 3.3 /W IC=1A V(BR)CBO ICB=1mA 30 50 80 100 120 150 200 250 V V(BR)CEO ICE=1mA 30 50 80 100 120 150 200 250 V V(BR)EBO IEB=1mA 4.0 V ... See More ⇒
Detailed specifications: MJW21192, MJW21193G, MJW21194G, MJW21195G, MJW21196G, MJW3281AG, 3CD010, 3CD020, BC327, 3CD050, 3CD075, 3CD1, 3CD100, 3CD1010, 3CD102, 3CD103, 3CD1094
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