2N835-51 Datasheet. Specs and Replacement
Type Designator: 2N835-51
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO51
2N835-51 Substitution
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2N835-51 datasheet
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Detailed specifications: 2N829, 2N83, 2N834, 2N834-46, 2N834-51, 2N834A, 2N835, 2N835-46, BD335, 2N837, 2N838, 2N839, 2N83A, 2N84, 2N840, 2N841, 2N841-46
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