All Transistors. 3CD1010 Datasheet

 

3CD1010 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3CD1010
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220AB

 3CD1010 Transistor Equivalent Substitute - Cross-Reference Search

   

3CD1010 Datasheet (PDF)

 ..1. Size:422K  lzg
3cd1010.pdf

3CD1010 3CD1010

2SA1010(3CD1010) PNP /SILICON PNP TRANSISTOR :DC/DC Purpose: Use for high voltage high speed switching, for a drive in devices such as switching regulators, DC/DC converters, high frequency power amplifiers. 2SC2334(3DD2334)

 9.1. Size:123K  china
3cd100.pdf

3CD1010

3CD100 PNP B C D E F G H PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=5mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=5mA 4.0 V ICBO VCB=50V

 9.2. Size:228K  lzg
3cd1094.pdf

3CD1010 3CD1010

2SB1094(3CD1094) PNP /SILICON PNP TRANSISTOR Purpose: Audio frequency power amplifier applications. : 2SD1585(3DD1585) Features: Complementary to the 2SD1585(3DD1585). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -60 V CEO V -7.0 V

 9.3. Size:29K  shaanxi
3cd102.pdf

3CD1010

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD102,3CD103 PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. The cover is insulation with three electrodes for 3CD102. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify

 9.4. Size:23K  shaanxi
3cd103.pdf

3CD1010

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD103PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JC

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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