3CD1010 Specs and Replacement

Type Designator: 3CD1010

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220AB

 3CD1010 Substitution

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3CD1010 datasheet

 ..1. Size:422K  lzg

 3cd1010.pdf pdf_icon

3CD1010

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 9.1. Size:123K  china

 3cd100.pdf pdf_icon

3CD1010

3CD100 PNP B C D E F G H PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=5mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=5mA 4.0 V ICBO VCB=50V... See More ⇒

 9.2. Size:228K  lzg

 3cd1094.pdf pdf_icon

3CD1010

2SB1094(3CD1094) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier applications. 2SD1585(3DD1585) Features Complementary to the 2SD1585(3DD1585). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -60 V CEO V -7.0 V ... See More ⇒

 9.3. Size:29K  shaanxi

 3cd102.pdf pdf_icon

3CD1010

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD102,3CD103 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. The cover is insulation with three electrodes for 3CD102. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify... See More ⇒

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Detailed specifications: MJW3281AG, 3CD010, 3CD020, 3CD030, 3CD050, 3CD075, 3CD1, 3CD100, 2SC1815, 3CD102, 3CD103, 3CD1094, 3CD1290, 3CD1375, 3CD150, 3CD205, 3CD3

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