3CD42 Specs and Replacement
Type Designator: 3CD42
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO257
3CD42 Substitution
- BJT ⓘ Cross-Reference Search
3CD42 datasheet
3CD42(TIP42) PNP A B C D E F PCM TC=25 100 W ICM 10 A Tjm 150 Tstg -55 150 VCE=10V Rth 1.25 /W IC=3A V(BR)CBO ICB=5mA 30 50 80 120 150 200 V V(BR)CEO ICE=5mA 30 50 80 120 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 1.0 mA... See More ⇒
Detailed specifications: 3CD150, 3CD205, 3CD3, 3CD32, 3CD32A, 3CD32B, 3CD32C, 3CD4, 2SC2625, 3CD438, 3CD4399, 3CD5, 3CD6, 3CD6109, 3CD6124, 3CD6125, 3CD6126
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