3CD4399 Specs and Replacement
Type Designator: 3CD4399
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
3CD4399 Substitution
- BJT ⓘ Cross-Reference Search
3CD4399 datasheet
3CD4399 PNP PCM TC=25 200 W ICM 30 A IB 7.5 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.5 /W IC=5A V(BR)CBO ICB=2mA 60 V V(BR)CEO ICE=2mA 60 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA IEBO VEB=4V 2.0 mA VBEsa... See More ⇒
3CD438 PNP PCM 1.25 W ICM 4 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=1mA 45 V V(BR)CEO ICE=10mA 45 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=45V 0.1 mA ICEO VCE=45V 0.1 mA IEBO VEB=5.0V 1.0 mA IC=2.0A VCEsat 0.6 V IB=0.2A VCE=5.0V hFE ... See More ⇒
Detailed specifications: 3CD3, 3CD32, 3CD32A, 3CD32B, 3CD32C, 3CD4, 3CD42, 3CD438, 8550, 3CD5, 3CD6, 3CD6109, 3CD6124, 3CD6125, 3CD6126, 3CD8, 3CD834
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