3CD4399 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CD4399
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
3CD4399 Transistor Equivalent Substitute - Cross-Reference Search
3CD4399 Datasheet (PDF)
3cd4399.pdf
3CD4399 PNP PCM TC=25 200 W ICM 30 A IB 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.5 /W IC=5A V(BR)CBO ICB=2mA 60 V V(BR)CEO ICE=2mA 60 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA IEBO VEB=4V 2.0 mA VBEsa
3cd438.pdf
3CD438 PNP PCM 1.25 W ICM 4 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=1mA 45 V V(BR)CEO ICE=10mA 45 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=45V 0.1 mA ICEO VCE=45V 0.1 mA IEBO VEB=5.0V 1.0 mA IC=2.0A VCEsat 0.6 V IB=0.2A VCE=5.0V hFE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3647
