3CD5 Specs and Replacement
Type Designator: 3CD5
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO257
3CD5 Substitution
- BJT ⓘ Cross-Reference Search
3CD5 datasheet
3CD5(3CF5) PNP A B C D E F G PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=5mA 80 150 200 250 350 450 600 V V(BR)CEO ICE=5mA 50 110 150 200 250 300 400 V V(BR)EBO IEB=1mA 4.0 V ICBO VC... See More ⇒
Detailed specifications: 3CD32, 3CD32A, 3CD32B, 3CD32C, 3CD4, 3CD42, 3CD438, 3CD4399, 9014, 3CD6, 3CD6109, 3CD6124, 3CD6125, 3CD6126, 3CD8, 3CD834, 3CD837
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