3CD8 PDF and Equivalents Search

 ..1. Size:143K  china

 3cd8.pdf

3CD8 PNP B C D E F G H PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=10mA 50 80 110 150 200 250 300 V V(BR)CEO ICE=10mA 50 80 110 150 200 250 300 V V(BR)EBO IEB=15mA 4.0 V ICBO VCB=20... See More ⇒

 0.1. Size:135K  china

 3cd837.pdf

3CD837 PNP PCM TC=25 30 W ICM 8.0 A Tjm 125 Tstg -55 150 VCE=10V Rth 5.0 /W IC=1A V(BR)CBO ICB=1mA 40 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=40V 0.5 mA ICEO VCE=18V 1.0 mA VBEsat 1.5 IC=2A V VCEsat IB=0... See More ⇒

 0.2. Size:151K  china

 3cd834.pdf

3CD834 PNP PCM TC=25 30 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 5 /W IC=1A V(BR)CBO ICB=1mA 60 V V(BR)CEO ICE=1mA 60 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.5 mA ICEO VCE=20V 1.0 mA IEBO VEB=5V 0.5 mA VBEsat 1.2 IC=... See More ⇒

 0.3. Size:220K  inchange semiconductor

 3cd834.pdf

isc Silicon PNP Power Transistor 3CD834 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.0V(Max) @I = -3.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATIN... See More ⇒