All Transistors. 3CD837 Datasheet

 

3CD837 Datasheet and Replacement


   Type Designator: 3CD837
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO257
 

 3CD837 Substitution

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3CD837 Datasheet (PDF)

 ..1. Size:135K  china
 3cd837.pdf pdf_icon

3CD837

3CD837 PNP PCM TC=25 30 W ICM 8.0 A Tjm 125 Tstg -55~150 VCE=10V Rth 5.0 /W IC=1A V(BR)CBO ICB=1mA 40 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=40V 0.5 mA ICEO VCE=18V 1.0 mA VBEsat 1.5 IC=2A V VCEsat IB=0

 9.1. Size:151K  china
 3cd834.pdf pdf_icon

3CD837

3CD834 PNP PCM TC=25 30 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=1A V(BR)CBO ICB=1mA 60 V V(BR)CEO ICE=1mA 60 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.5 mA ICEO VCE=20V 1.0 mA IEBO VEB=5V 0.5 mA VBEsat 1.2 IC=

 9.2. Size:220K  inchange semiconductor
 3cd834.pdf pdf_icon

3CD837

isc Silicon PNP Power Transistor 3CD834DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -3.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifierapplicationsABSOLUTE MAXIMUM RATIN

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA1402D | BC558CBK | ECG85 | BC558ABK | 3CG1576A | SRC1211M | MMS8050

Keywords - 3CD837 transistor datasheet

 3CD837 cross reference
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